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H02N65 Scheda tecnica(PDF) 2 Page - Hi-Sincerity Mocroelectronics

Il numero della parte H02N65
Spiegazioni elettronici  N-Channel Power Field Effect Transistor
Download  6 Pages
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Produttore elettronici  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H02N65 Scheda tecnica(HTML) 2 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200910
Issued Date : 2009.04.07
Revised Date :
Page No. : 2/6
H02N60E, H02N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-220AB
2.87
RθJC
Thermal Resistance Junction to Case Max.
TO-220FP
5.5
°C/W
RθJA
Thermal Resistance Junction to Ambient Max.
62.5
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
650
-
-
V
Drain-Source Leakage Current (VDS=650V, VGS=0V)
-
-
5
uA
IDSS
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
-
-
50
uA
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
-
-
-100
nA
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
2
-
4
V
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
-
-
4.6
Ω
gFS
Forward Transconductance (VDS≥50V, ID=1A)*
1
-
-
mhos
Ciss
Input Capacitance
-
300
-
Coss
Output Capacitance
-
30
-
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
-
3
-
pF
td(on)
Turn-on Delay Time
-
13
-
tr
Rise Time
-
12
-
td(off)
Turn-off Delay Time
-
73
-
tf
Fall Time
(VDD=300V, ID=2A, RG=25Ω,
VGS=10V)*
-
15
-
ns
Qg
Total Gate Charge
-
9.3
13
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain Charge
(VDS=300V, ID=2A, VGS=10V)*
-
3.3
-
nC
*: Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
Min.
Typ.
Max.
Units
VSD
Forward On Voltage(1)
IS=2A, VGS=0V, TJ=25
oC
-
-
1.4
V
trr
Reverse Recovery Time
-
235
-
ns
Qrr
Reverse Recovery Charge
IS=2A, VGS=0V, dIS/dt=100A/us
-
1.0
-
nC
**: Negligible, Dominated by circuit inductance


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