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CSD16340Q3 Scheda tecnica(PDF) 3 Page - Texas Instruments

Il numero della parte CSD16340Q3
Spiegazioni elettronici  The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD16340Q3 Scheda tecnica(HTML) 3 Page - Texas Instruments

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GATE
Source
DRAIN
M0161-02
GATE
Source
DRAIN
M0161-01
t
P – PulseDuration–s
G012
0.01
0.1
10
1
0.001
0.01
0.1
1
10
100
0.001
1k
0.1
0.05
0.01
0.5
0.02
0.3
SinglePulse
DutyCycle=t /t
1 2
TypicalR
JA
q
=138 C/W(minCu)
o
T
J =P xZq
q
JA
JA
xR
t
1
t
2
P
CSD16340Q3
www.ti.com
SLPS247D
– DECEMBER 2009 – REVISED NOVEMBER 2011
Max RθJA = 162°C/W
Max RθJA = 58°C/W
when mounted on
when mounted on 1
minimum pad area of 2
inch2 of 2 oz. Cu.
oz. Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 2. Transient Thermal Impedance
Copyright
© 2009–2011, Texas Instruments Incorporated
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