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MJ15019 Scheda tecnica(PDF) 2 Page - Motorola, Inc |
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MJ15019 Scheda tecnica(HTML) 2 Page - Motorola, Inc |
2 / 4 page MJ15018 MJ15020 MJ15019 MJ15021 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) MJ15018, MJ15019 MJ15020, MJ15021 VCEO(sus) 200 250 — — Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) MJ15018, MJ15019 (VCE = 200 Vdc, IB = 0) MJ15020, MJ15021 ICEO — — 500 500 µAdc Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) IEBO — 500 µAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward–Biased (VCE = 50 Vdc, t = 0.5 s (non–repetitive) IS/b 3.0 — Adc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 V) (IC = 3.0 Adc, VCE = 4.0 V) hFE 30 10 — — Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) — 1.0 Vdc Base–Emitter on Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.0 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 20 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz) Cob — 500 pF (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2% Figure 2. DC Current Gain Figure 3. Maximum Rated Forward Biased Safe Operating Area 5.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 7.0 10 500 10 2.0 5.0 100 200 20 30 1.0 0.5 0.02 0.2 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 300 1.0 3.0 5.0 10 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C VCE = 4.0 Vdc 50 100 20 2.0 200 MJ15018/19 TC = 25°C PNP 50 70 2.0 7.0 0.3 0.7 70 30 10 5.0 7.0 3.0 3.0 0.7 0.3 0.1 0.03 0.01 0.07 0.05 NPN MJ15020/21 7.0 TYPICAL DYNAMIC CHARACTERISTICS |
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