ACE7400CM+H datasheet(2/7 Pages) ACE

Il numero della parte	ACE7400CM+H

Spiegazioni elettronici	N-Channel Enhancement Mode MOSFET

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Produttore elettronici	ACE [ACE Technology Co., LTD.]

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ACE7400

N-Channel Enhancement Mode MOSFET

VER 1.3

2

Packaging Type

SOT-323

3

1

2

Ordering information

ACE7400 XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250uA

30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

0.8

1.6

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

nA

Zero Gate Voltage Drain

Current

IDSS

VDS=24V, VGS=0V

1

uA

VDS=24V, VGS=0V TJ=55℃

10

On-State Drain Current

ID(ON)

VDS≧4.5V, VGS=10V

6

A

VDS≧4.5V, VGS=-4.5V

4

Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=2.8A

0.062

0.077

Ω

VGS=4.5V, ID=2.3A

0.070

0.085

VGS=2.5V, ID=1.5A

0.095

0.110

Forward Transconductance

Gfs

VDS=4.5V,ID=2.8A

4.6

S

Diode Forward Voltage

VSD

IS=1.25A, VGS=0V

0.82

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=15V, VGS=4.5V, ID=-2.0A

4.2

6

nC

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

1.5

SOT-323

Description

1

Gate

2

Source

3

Drain

Halogen - free

CM : SOT-323

Pb - free

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