TC1304V

REV5_20070502

Phone: 886-6-5050086

Fax: 886-6-5051602

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°°°°C)

Symbol

Parameter

Rating

Drain-Source Voltage

7.0 V

Gate-Source Voltage

-3.0 V

Drain Current

Gate Current

600

RF Input Power, CW

24 dBm

Continuous Dissipation

800 mW

Channel Temperature

175

°C

Storage Temperature

- 65

CHIP DIMENSIONS

SS

G

D

Units: Micrometers

Chip Thickness: 50

Gate Pad: 75 x 70

Drain Pad: 80 x 70

Source Pad: 75 x 80

CHIP HANDLING

DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be

accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃± 5 ℃ ; Handling Tool :

Tweezers ; Time: less than 1min .

WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil

(0.018 or 0.025mm) gold wire. Stage Temperature: 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond Force:

20 to 30 gms depending on size of wire and Bond Tip Temperature.

HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised

during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all

stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.