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2SJ665 Scheda tecnica(PDF) 1 Page - Sanyo Semicon Device

Il numero della parte 2SJ665
Spiegazioni elettronici  General-Purpose Switching Device Applications
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ665 Scheda tecnica(HTML) 1 Page - Sanyo Semicon Device

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2SJ665
No.8590-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TO-263-2L
10.0
5.3
1.27
0.8
2.54
2.54
0.254
4.5
8.0
1.3
0.5
12
3
4
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
Electrical Connection
Features
ON-resistance RDS(on)1=59mΩ(typ.)
Input capacitance Ciss=4200pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--27
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--108
A
Allowable Power Dissipation
PD
Tc=25°C
65
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
48
mJ
Avalanche Current *2
IAV
--27
A
Note :
*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1)
*2 L≤100μH, single pulse
Package Dimensions
unit : mm (typ)
7535-001
71112 TKIM TC-00002779/N1805QA MSIM TB-00001098
SANYO Semiconductors
DATA SHEET
2SJ665
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Ordering number : EN8590A
2SJ665-DL-1E
1
3
2, 4
J665
LOT No.
DL


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