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2SA1593 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device |
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2SA1593 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device |
2 / 9 page 2SA1593/2SC4135 No.2511-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 1W Tc=25°C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 100* 400* Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)100mA 120 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (25)16 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)100mA (--0.22)0.13 (--0.6)0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)100mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)100 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-ON Time ton See specified Test Circuit. (80)80 ns Storage Time tstg (750)1000 ns Fall Time tf (40)50 ns * : The 2SA1593/2SC4135 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA1593S-E TP 500pcs./bag Pb Free 2SA1593T-E TP 500pcs./bag 2SC4135S-E TP 500pcs./bag 2SC4135T-E TP 500pcs./bag 2SA1593S-TL-E TP-FA 700pcs./reel 2SA1593T-TL-E TP-FA 700pcs./reel 2SC4135S-TL-E TP-FA 700pcs./reel 2SC4135T-TL-E TP-FA 700pcs./reel VR RL --5V 50V IC=10IB1= --10IB2=0.7A (For PNP, the polarity is reversed) + + 50 Ω INPUT OUTPUT RB 100 μF 470 μF PW=20 μs IB1 IB2 DC ≤1% |
Codice articolo simile - 2SA1593 |
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