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FM25L16B-DG Scheda tecnica(PDF) 10 Page - Cypress Semiconductor

Il numero della parte FM25L16B-DG
Spiegazioni elettronici  16Kb Serial 3V F-RAM Memory
Download  14 Pages
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Produttore elettronici  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25L16B-DG Scheda tecnica(HTML) 10 Page - Cypress Semiconductor

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FM25L16B - 16Kb 3V SPI F-RAM
Rev. 3.0
Jan. 2012
Page 10 of 14
AC Parameters (TA = -40 C to + 85 C, CL = 30pF, VDD = 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
fCK
SCK Clock Frequency
0
20
MHz
tCH
Clock High Time
22
ns
1
tCL
Clock Low Time
22
ns
1
tCSU
Chip Select Setup
10
ns
tCSH
Chip Select Hold
10
ns
tOD
Output Disable Time
20
ns
2
tODV
Output Data Valid Time
20
ns
tOH
Output Hold Time
0
ns
tD
Deselect Time
60
ns
tR
Data In Rise Time
50
ns
2,3
tF
Data In Fall Time
50
ns
2,3
tSU
Data Setup Time
5
ns
tH
Data Hold Time
5
ns
tHS
/HOLD Setup Time
10
ns
tHH
/HOLD Hold Time
10
ns
tHZ
/HOLD Low to Hi-Z
20
ns
2
tLZ
/HOLD High to Data Active
20
ns
2
Notes
1.
tCH + tCL = 1/fCK.
2.
Characterized but not 100% tested in production.
3.
Rise and fall times measured between 10% and 90% of waveform.
Capacitance (TA = 25 C, f=1.0 MHz, VDD = 3.3V)
Symbol
Parameter
Min
Max
Units
Notes
CO
Output Capacitance (SO)
-
8
pF
1
CI
Input Capacitance
-
6
pF
1
Notes
1.
This parameter is periodically sampled and not 100% tested.
2.
Slope measured at any point on VDD waveform.
AC Test Conditions
Input Pulse Levels
10% and 90% of VDD
Input rise and fall times
5 ns
Input and output timing levels
0.5 VDD
Output Load Capacitance
30 pF
Data Retention
Symbol
Parameter
Min
Max
Units
Notes
TDR
@
+85ºC
10
-
Years
@
+80ºC
19
-
Years
@
+75ºC
38
-
Years


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