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TD4A60S Scheda tecnica(PDF) 1 Page - Apollo Electron Co., Ltd. |
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TD4A60S Scheda tecnica(HTML) 1 Page - Apollo Electron Co., Ltd. |
1 / 5 page copyright@ Apollo Electron Co.,Ltd., All rights reserved. Absolute Maximum Ratings ( Tj = 25°C unless otherwise specifed ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage Since wave, 50 to 60Hz 600 V IT(RMS) R.M.S On-State Current Tj = 125 °C, Full Sine wave 4.0 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25/27 A I2t I2t tp= 10ms 3.1 A2s PG(AV) Average Gate Power Dissipation Tj = 125 °C 0.5 W PGM Peak Gate Power Dissipation Tj=125°C 5 W IGM Peak Gate Current Tj = 125 °C 2 A TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C Sensitive Gate Triac Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) General Description This device is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 2.T2 3.Gate 1.T1 Symbol ○ ○ ○ ▼▲ 1/5 TD4A60S TO-252 1 2 3 Apr, 2003. Rev. 0 July, 2010. Rev. 2 This device may substitute for T410-600B. |
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