BD244B datasheet(2/3 Pages) COMSET

Il numero della parte	BD244B

Spiegazioni elettronici	SILICON PNP POWER TRANSISTORS

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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2 / 3 page

BD244 – A – B – C

25/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICES

Collector- Emitter Cut-

off Current

VCE = -45 V , VBE = 0

BD244

-

-0.4

mA

VCE = -60 V , VBE = 0

BD244A

VCE = -80 V , VBE = 0

BD244B

VCE = -100 V , VBE = 0

BD244C

ICEO

Collector Cut-off

Current

VCE = -30 V , IB = 0

BD244

-

-0.7

mA

BD244A

VCE = -60 V , IB = 0

BD244B

BD244C

IEBO

Emitter Cut-off Current VE B = -5 V , IC = 0

-

-1

mA

VCEO

Collector- Emitter

Breakdown Voltage (*)

IC = -30 mA, IB = 0

BD244

-45

-

V

BD244A

-60

-

BD244B

-80

-

BD244C

-100

-

hFE

DC Current Gain (*)

VCE = -4 V, IC = -0.3 A

30

-

VCE = -4 V, I C= -3 A

15

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = -6 A, IB = -1 A

-

-1

V

VBE

Base-Emitter

Voltage(*)

VCE = -4 V, IC = -6 A

-

-1.6

V

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BD244B Scheda tecnica(PDF) 2 Page - Comset Semiconductor

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