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BD242B Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BD242B Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
1 / 3 page PNP BD242 – A – B – C 23/10/2012 COMSET SEMICONDUCTORS 1/3 M ME ED DIIU UM M P PO OW WE ER R L LIIN NE EA AR R A AN ND D S SW WIIT TC CH HIIN NG G A AP PP PL LIIC CA AT TIIO ON NS S.. The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB = 0) BD242 -45 V BD242A -60 BD242B -80 BD242C -100 VCER Collector-Emitter Voltage (RBE = 100 Ω) BD242 -55 V BD242A -70 BD242B -90 BD242C -115 VEBO Emitter-Base Voltage (IC = 0) BD242 -5.0 V BD242A BD242B BD242C IC Collector Current IC -3 A ICM -5 IB Base Current -1 A PT Power Dissipation @ Tamb = 25° C 2 W @ Tcase = 25° C 40 W TJ Junction Temperature 150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-amb Thermal Resistance, Junction-ambient 62.5 °C/W RthJ-case Thermal Resistance, Junction-case 3.13 °C/W |
Codice articolo simile - BD242B |
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Descrizione simile - BD242B |
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