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BD242B Scheda tecnica(PDF) 1 Page - Comset Semiconductor

Il numero della parte BD242B
Spiegazioni elettronici  MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
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Produttore elettronici  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BD242B Scheda tecnica(HTML) 1 Page - Comset Semiconductor

  BD242B Datasheet HTML 1Page - Comset Semiconductor BD242B Datasheet HTML 2Page - Comset Semiconductor BD242B Datasheet HTML 3Page - Comset Semiconductor  
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PNP BD242 – A – B – C
23/10/2012
COMSET SEMICONDUCTORS
1/3
M
ME
ED
DIIU
UM
M P
PO
OW
WE
ER
R L
LIIN
NE
EA
AR
R A
AN
ND
D S
SW
WIIT
TC
CH
HIIN
NG
G
A
AP
PP
PL
LIIC
CA
AT
TIIO
ON
NS
S..
The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The NPN complements are BD241, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
BD242
-45
V
BD242A
-60
BD242B
-80
BD242C
-100
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
BD242
-55
V
BD242A
-70
BD242B
-90
BD242C
-115
VEBO
Emitter-Base Voltage (IC = 0)
BD242
-5.0
V
BD242A
BD242B
BD242C
IC
Collector Current
IC
-3
A
ICM
-5
IB
Base Current
-1
A
PT
Power Dissipation
@ Tamb = 25° C
2
W
@ Tcase = 25° C
40
W
TJ
Junction Temperature
150
°C
TS
Storage Temperature
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-amb
Thermal Resistance, Junction-ambient
62.5
°C/W
RthJ-case
Thermal Resistance, Junction-case
3.13
°C/W


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