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NZT560A Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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NZT560A Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT560/NZT560A Rev. D1 2 Electrical Characteristics T A=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Test Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100µA 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA 5 V ICBO Collector Cutoff Current VCB = 30V VCB = 30V, TA = 100°C 100 10 nA µA IEBO Emitter Cutoff Current VEB = 4V 100 nA On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V NZT560 NZT560A IC = 1A, VCE = 2V IC = 3A, VCE = 2V 70 100 250 80 25 300 550 VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA NZT560 NZT560A 300 450 400 mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 30 pF fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz |
Codice articolo simile - NZT560A_09 |
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Descrizione simile - NZT560A_09 |
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