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NZT560A Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte NZT560A
Spiegazioni elettronici  NPN Low Saturation Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NZT560A Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NZT560/NZT560A Rev. D1
2
Electrical Characteristics T
A=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
60
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
80
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
5
V
ICBO
Collector Cutoff Current
VCB = 30V
VCB = 30V, TA = 100°C
100
10
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4V
100
nA
On Characteristics *
hFE
DC Current Gain
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
NZT560
NZT560A
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
70
100
250
80
25
300
550
VCE(sat) Collector-Emitter Saturation Voltage
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
NZT560
NZT560A
300
450
400
mV
mV
mV
VBE(sat) Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
1.25
V
VBE(on)
Base-Emitter On Voltage
IC = 1A, VCE = 2V
1
V
Small Signal Characteristics
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
30
pF
fT
Transition Frequency
IC = 100mA, VCE = 5V, f = 100MHz
75
MHz


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