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NZT560A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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NZT560A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT560/NZT560A Rev. D1 1 May 2009 NZT560/NZT560A NPN Low Saturation Transistor Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* T A=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150°C. 2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C Symbol Parameter Max. Units NZT560 NZT560A PD Total Device Dissipation 1 W RθJA Thermal Resistance, Junction to Ambient 125 °C/W 1. Base 2. Collector 3. Emitter 1 2 2 3 |
Codice articolo simile - NZT560A_09 |
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