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FQPF11N40C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQPF11N40C Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP11N40C/FQPF11N40C Rev. C1 May 2008 QFET ® FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 85pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings * Drain current limited by maximum junction temperature Thermal Characteristics TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ▲ ◀ ● ● ● ▲ ◀ S D G Symbol Parameter FQP11N40C FQPF11N40C Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 10.5 10.5 * A - Continuous (TC = 100°C) 6.6 6.6 * A IDM Drain Current - Pulsed (Note 1) 42 42 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 135 44 W - Derate above 25°C 1.07 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP11N40C FQPF11N40C Units RθJC Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W |
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