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FCD9N60N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

Il numero della parte FCD9N60N
Spiegazioni elettronici  N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCD9N60N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

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FCD9N60NTM Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 250μA
TJ, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 4.5A
TJ, Junction Temperature [
oC]
1
10
100
1000
0.01
0.1
1
10
50
20μs
100μs
1ms
10ms
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
DC
25
50
75
100
125
150
0
2
4
6
8
10
TC, Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.005
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 1.35
oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Rectangular Pulse Duration [sec]
t1
PDM
t2


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