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BD433S Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte BD433S
Spiegazioni elettronici  NPN Epitaxial Silicon Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BD433S Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BD433/435/437 Rev. B0
1
July 2011
BD433/435/437
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear and Switching Applications
• Complement to BD434, BD436 and BD438 respectively
Ordering Information
* The suffix "S" of FSID denotes TO126 package.
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Part Number
Marking
Package
Packing Method
Remarks
BD433S
BD433
TO-126
BULK
BD435S
BD435
TO-126
BULK
BD435STU
BD435
TO-126
RAIL
BD437S
BD437
TO-126
BULK
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VCES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VCEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
4
A
ICP
*Collector Current (Pulse)
7
A
IB
Base Current
1
A
PC
Collector Dissipation (TC = 25°C)
36
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 to 150
°C
1
TO-126
1. Emitter
2.Collector
3.Base


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