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BD433S Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BD433S Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com BD433/435/437 Rev. B0 1 July 2011 BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively Ordering Information * The suffix "S" of FSID denotes TO126 package. Absolute Maximum Ratings T A = 25°C unless otherwise noted Part Number Marking Package Packing Method Remarks BD433S BD433 TO-126 BULK BD435S BD435 TO-126 BULK BD435STU BD435 TO-126 RAIL BD437S BD437 TO-126 BULK Symbol Parameter Value Units VCBO Collector-Base Voltage : BD433 : BD435 : BD437 22 32 45 V V V VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V VCEO Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current 1 A PC Collector Dissipation (TC = 25°C) 36 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to 150 °C 1 TO-126 1. Emitter 2.Collector 3.Base |
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