FDD24AN06LA0_11 datasheet(7/8 Pages) FAIRCHILD

Il numero della parte	FDD24AN06LA0

Spiegazioni elettronici	N-Channel Logic Level PowerTrench짰 MOSFET 60V, 36A, 24m廓

Download	8 Pages

Scroll/Zoom	100%

Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

Logo

7 / 8 page

Thermal Resistance vs. Mounting Pad Area

The maximum rated junction temperature, TJM, and the

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, PDM, in an

application.

Therefore

the

application’s

ambient

temperature, TA (

oC), and thermal resistance RθJA (oC/W)

must be reviewed to ensure that TJM is never exceeded.

Equation 1 mathematically represents the relationship and

serves as the basis for establishing the rating of the part.

In using surface mount devices such as the TO-252

package, the environment in which it is applied will have a

significant influence on the part’s current and maximum

power dissipation ratings. Precise determination of PDM is

complex and influenced by many factors:

1. Mounting pad area onto which the device is attached and

whether there is copper on one side or both sides of the

board.

2. The number of copper layers and the thickness of the

board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For non steady state applications, the pulse width, the

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

Fairchild

provides

thermal

information

to

assist

the

designer’s preliminary application evaluation. Figure 21

defines the RθJA for the device as a function of the top

copper (component side) area. This is for a horizontally

positioned FR-4 board with 1oz copper after 1000 seconds

of steady state power with no air flow. This graph provides

the necessary information for calculation of the steady state

junction

temperature

or

power

dissipation.

Pulse

applications can be evaluated using the Fairchild device

Spice thermal model or manually utilizing the normalized

maximum transient thermal impedance curve.

Thermal resistances corresponding to other copper areas

can be obtained from Figure 21 or by calculation using

Equation 2 or 3. Equation 2 is used for copper area defined

in inches square and equation 3 is for area in centimeters

square. The area, in square inches or square centimeters is

the top copper area including the gate and source pads.

(EQ. 1)

P

DM

T

JM

T

A

–

()

RθJA

-----------------------------

=

Area in Inches Squared

(EQ. 2)

RθJA

33.32

23.84

0.268

Area

+

()

-------------------------------------

+

=

(EQ. 3)

RθJA

33.32

154

1.73

Area

+

()

----------------------------------

+

=

Area in Centimeters Squared

25

50

75

100

125

0.01

0.1

1

10

(0.645)

(6.45)

(64.5)

(0.0645)

Figure 21. Thermal Resistance vs Mounting

Pad Area

RθJA = 33.32+ 23.84/(0.268+Area) EQ.2

AREA, TOP COPPER AREA in2 (cm2)

RθJA = 33.32+ 154/(1.73+Area) EQ.3

www.fairchildsemi.com

FDD24AN06LA0_F085 Rev. C1

Codice articolo simile - FDD24AN06LA0_11

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FDD24AN06LA0	226Kb / 11P	N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET

More results

Descrizione simile - FDD24AN06LA0_11

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FDD26AN06A0	876Kb / 8P	N-Channel PowerTrench짰 MOSFET 60V, 36A, 26m廓
	FDN5632N_F085	267Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET 60V, 1.6A, 98m廓
	FDC5661N	425Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET 60V, 4A, 60m廓
	FDD5810-F085	454Kb / 7P	N-Channel Logic Level Trench MOSFET 60V, 36A, 27m
	FDD5810	229Kb / 7P	N-Channel Logic Level Trench짰 MOSFET 60V, 36A, 27m"\|\|" "474244 Wolfson AudioPlus??Stereo CODEC with Power Managem
ON Semiconductor	FDMS9408L-F085	566Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET August-2017, Rev. 2
Fairchild Semiconductor	FDB8832	404Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET 30V, 80A, 2.1m廓
	FDC637BNZ	403Kb / 6P	N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 6.2A, 24m廓
	FDC5661N_F085	425Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET
ON Semiconductor	FDD9407L-F085	545Kb / 7P	N-Channel Logic Level PowerTrench짰 MOSFET August-2017, Rev. 2

More results

FDD24AN06LA0 Scheda tecnica(PDF) 7 Page - Fairchild Semiconductor

FDD24AN06LA0 Scheda tecnica(HTML) 7 Page - Fairchild Semiconductor

Codice articolo simile - FDD24AN06LA0_11

Descrizione simile - FDD24AN06LA0_11

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL