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DM-232 Scheda tecnica(PDF) 1 Page - Sony Corporation |
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DM-232 Scheda tecnica(HTML) 1 Page - Sony Corporation |
1 / 5 page —1— E88Z13D5X-TE Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. Description DM-232 a magnetic sensor using magnetoresist- ance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is suitable for angle of rotation detection. Features • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m • Fitted with bias magnet: stable output. • High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet) Applications • Non-contact angle of rotation detection. • Contactless potentiometer. Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VCC 10 V • Storage temperature Tstg –30 to +100 °C Recommended Operating Conditions • Supply voltage VCC 5V • Operating temperature Topr –20 to + 75 °C Magnetoresistance Element M-118 (Plastic) DM-232 Electrical Characteristics Ta=25 °C Item Symbol Condition Min. Typ. Max. Unit Output voltage Midpoint potential Midpoint potential difference/Output voltage Total resistance VO VA, VB |VA-VB| VO RT VCC=5 V , H=14400A/m (Peak) AC magnetic field θ =0 ° VCC=5 V , H=0 A/m VCC=5 V , H=0 A/m H=14400A/m (Peak) AC magnetic field θ =0 ° 150 2.475 500 650 2.525 15 800 mVp-p V % Ω For the availability of this product, please contact the sales office. |
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