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2N3019HR Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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2N3019HR Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 9 page This is information on a product in full production. October 2012 Doc ID 15384 Rev 3 1/9 9 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features ■ Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■ Radiation level: lot specific total dose contact marketing for specified level Description The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails. Figure 1. Internal schematic diagram BVCEO 80 V IC (max) 1 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C TO-39 Table 1. Device summary Order codes Package Lead finish Marking Type EPPL Packaging 2N3019HR TO-39 Gold Solder Dip 520101103 520101104 ESCC Flight Yes Strip pack www.st.com |
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