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TPD1039S Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TPD1039S
Spiegazioni elettronici  Low-Side Switch for Motor, Solenoid and Lamp Drive
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD1039S Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TPD1039S
2006-10-31
3
Truth Table
VIN
VDRAIN
State
L
H
H
L
Normal
L
H
H
L
Overcurrent
L
H
H
H
Overtemperature
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS (DC)
45
V
Drain current
ID (DC)
1.5
A
Input voltage
VIN
−0.5~6
V
Power dissipation (Ta
= 25°C)
PD
0.9
W
Single pulse active clamp capability
(Note 1)
EAS
20
mJ
Active clamp current
IAR
1.5
A
Repetitive active clamp capability
(Note 2)
EAR
0.09
mJ
Operating temperature
Topr
−40~85
°C
Channel temperature
Tch
150 (Note 3)
°C
Storage temperature range
Tstg
−55~150
°C
Note 1: Active clamp capability (single pulse) test condition
VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 1.5 A, RG = 25 Ω
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Note 3: Overtemperature protection will work when the channel temperature exceeds 125°C.
Be sure to operate the device in such a way that the channel temperature does not exceed 125°C.
Note4:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch-a)
139
°C/W


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