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TPD1039S Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TPD1039S Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TPD1039S 2006-10-31 3 Truth Table VIN VDRAIN State L H H L Normal L H H L Overcurrent L H H H Overtemperature Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS (DC) 45 V Drain current ID (DC) 1.5 A Input voltage VIN −0.5~6 V Power dissipation (Ta = 25°C) PD 0.9 W Single pulse active clamp capability (Note 1) EAS 20 mJ Active clamp current IAR 1.5 A Repetitive active clamp capability (Note 2) EAR 0.09 mJ Operating temperature Topr −40~85 °C Channel temperature Tch 150 (Note 3) °C Storage temperature range Tstg −55~150 °C Note 1: Active clamp capability (single pulse) test condition VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 1.5 A, RG = 25 Ω Note 2: Repetitive rating; pulse width limited by maximum channel temperature. Note 3: Overtemperature protection will work when the channel temperature exceeds 125°C. Be sure to operate the device in such a way that the channel temperature does not exceed 125°C. Note4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch-a) 139 °C/W |
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