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TC75S63TU Scheda tecnica(PDF) 7 Page - Toshiba Semiconductor |
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TC75S63TU Scheda tecnica(HTML) 7 Page - Toshiba Semiconductor |
7 / 9 page TC75S63TU 2012-03-14 7 GV – f Frequency f (Hz) 0 10 40 120 100 1 k 10 k 100 k 1 M 10 M 80 VDD = 3.3 V VSS = GND Ta = 25°C 0 0 1 2 3 4 5 6 400 800 Supply voltage VDD (V) IDD – VDD VSS = GND Ta = 25°C Test Circuit 5 100 200 300 500 600 700 Ambient temperature Ta (°C) PD – Ta −40 100 0 40 120 80 200 300 400 500 Circuit board material: glass epoxy, Circuit board dimention: 30 mm × 30 mm, pad area: 35 mm 2 (t = 0.8 mm) Frequency f (Hz) GV,φ – f -40 100 1k 10M 50 30 40 -30 -20 -10 0 10 20 1M VDD = 3.3 V, VSS = GND GV=40dB, Ta = 25°C 10k 100k Phase Voltage gain -180 225 135 180 -135 -90 -45 0 45 90 Frequency f (Hz) VNI – f 0 10 100 10k 40 VDD = 3.3 V, VSS = GND GV=40dB, RS=100 Ω Rf=10k Ω, Ta = 25°C 45 5 10 15 20 25 30 35 1k |
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