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2SC6135 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SC6135
Spiegazioni elettronici  High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6135 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SC6135
2010-03-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6135
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.1A)
Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
High-speed switching: tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.0
Collector current
Pulse
ICP
2.0
A
Base current
IB
0.1
A
PC (Note1)
800
Collector power dissipation
PC (Note2)
500
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1:
Mounted on ceramic board.
(25.4 mm
× 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note2: Mounted on FR4 board.
(25.4 mm
× 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1.7±0.1
2.1±0.1
1
2
3
1: Gate
2: Source
3: Drain
UFM


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