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2SC6135 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SC6135 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC6135 2010-03-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 1.0 Collector current Pulse ICP 2.0 A Base current IB 0.1 A PC (Note1) 800 Collector power dissipation PC (Note2) 500 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) 1.7±0.1 2.1±0.1 1 2 3 1: Gate 2: Source 3: Drain UFM |
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