TC7WZ00FU/FK

2009-09-09

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WZ00FU,TC7WZ00FK

Dual 2-Input NAND Gate

Features

• High output current

• Operating voltage range

• 5.5-V tolerant inputs

• 5.5-V power down protection outputs

• Matches the performance of TC74LCX series when operated at

Marking

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

TC7WZ00FU

TC7WZ00FK

Weight

SSOP8-P-0.65

: 0.02 g (typ.)

SSOP8-P-0.50A

: 0.01 g (typ.)

Characteristics

Symbol

Rating

Unit

Supply voltage

−0.5 to 6

V

DC input voltage

−0.5 to 6

V

−0.5 to 6 (Note 1)

DC output voltage

V

Input diode current

−20

mA

Output diode current

−20

(Note 3)

mA

DC output current

±50

mA

±50

mA

Power dissipation

300 (SM8)

200 (US8)

mW

Storage temperature

−65 to 150

°C

Lead temperature (10s)

260

°C

(SM8)

(US8)

Product Name

SM8

US8

Z 00

Lot No.

WZ

00

1A

1

1B

2

2Y

3

GND

4

7

1Y

6

2B

5

2A