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TC7WG125FK Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TC7WG125FK Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 9 page TC7WG125FU/FK 2009-09-24 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG125FU,TC7WG125FK Dual Bus Buffer with 3-STATE Output Features High output current : ±8 mA (min) at VCC = 3V Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3V,15pF Operating voltage range : VCC = 0.9 to 3.6 V 5.5-V tolerant inputs 3.6-V power down protection outputs Marking Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings. Note 3: VOUT < GND TC7WG125FU (SM8) TC7WG125FK (US8) Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 4.6 V DC input voltage VIN −0.5 to 7.0 V 0.5 to 4.6 (Note 1) DC output voltage VOUT 0.5 to VCC 0.5 (Note 2) V Input diode current IIK −20 mA Output diode current IOK −20 (Note 3) mA DC output current IOUT ±25 mA DC VCC / GND current ICC ±100 mA Power dissipation PD 300 (SM8) 200 (US8) mW Storage temperature Tstg −65 to 150 °C SM8 US8 Product name G 125 Lot. No WG 125 VCC Y1 A2 G1 GND A1 1 2 3 4 Y2 G2 8 7 6 5 |
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Descrizione simile - TC7WG125FK_09 |
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