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CAT25256HU4I.GT3 Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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CAT25256HU4I.GT3 Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 20 page CAT25256 http://onsemi.com 2 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature −45 to +130 °C Storage Temperature −65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units NEND (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles TDR Data Retention 100 Years 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 3. Page Mode, VCC = 5 V, 25°C. 4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT (VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) Symbol Parameter Test Conditions Min Max Units ICCR Supply Current (Read Mode) Read, VCC = 5.5 V, SO open 10 MHz / −40°C to 85°C 2 mA 5 MHz / −40°C to 125°C 2 mA ICCW Supply Current (Write Mode) Write, VCC = 5.5 V, SO open 10 MHz / −40°C to 85°C 4 mA 5 MHz / −40°C to 125°C 4 mA ISB1 Standby Current VIN = GND or VCC, CS = VCC, WP = VCC, HOLD = VCC, VCC = 5.5 V TA = −40°C to +85°C 1 mA TA = −40°C to +125°C 3 mA ISB2 Standby Current VIN = GND or VCC, CS = VCC, WP = GND, HOLD = GND, VCC = 5.5 V TA = −40°C to +85°C 4 mA TA = −40°C to +125°C 5 mA IL Input Leakage Current VIN = GND or VCC −2 2 mA ILO Output Leakage Current CS = VCC, VOUT = GND or VCC TA = −40°C to +85°C −1 1 mA TA = −40°C to +125°C −1 2 mA VIL Input Low Voltage −0.5 0.3 VCC V VIH Input High Voltage 0.7 VCC VCC + 0.5 V VOL1 Output Low Voltage VCC > 2.5 V, IOL = 3.0 mA 0.4 V VOH1 Output High Voltage VCC > 2.5 V, IOH = −1.6 mA VCC − 0.8 V V VOL2 Output Low Voltage VCC > 1.8 V, IOL = 150 mA 0.2 V VOH2 Output High Voltage VCC > 1.8 V, IOH = −100 mA VCC − 0.2 V V |
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