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BAS116TT1G Scheda tecnica(PDF) 1 Page - ON Semiconductor

Il numero della parte BAS116TT1G
Spiegazioni elettronici  Switching Diode
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BAS116TT1G Scheda tecnica(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 1
1
Publication Order Number:
BAS116TT1/D
BAS116TT1G
Switching Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
75
V
Peak Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD
360
2.9
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
345
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
CASE 463
SOT−416
STYLE 2
MARKING
DIAGRAM
3
CATHODE
1
ANODE
BAS116TT1G
SOT−416
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 2
3
AE MG
G
1
AE
= Specific Device Code
M
= Date Code
G
= Pb−Free Package


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