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SI4090DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4090DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4090DY New Product Document Number: 63917 S12-1135-Rev. A, 21-May-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server • Motor Drive Control • Synchronous Rectification Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) 100 0.0100 at VGS = 10 V 19.7 27.9 nC 0.0105 at VGS = 7.5 V 19.2 0.0120 at VGS = 6.0 V 18 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4090DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 19.7 A TC = 70 °C 15.8 TA = 25 °C 13.2b, c TA = 70 °C 10.4b, c Pulsed Drain Current (t = 300 µs) IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 7 TA = 25 °C 3.1b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 29 35 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 |
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