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TPS1110DR Scheda tecnica(PDF) 3 Page - Texas Instruments |
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TPS1110DR Scheda tecnica(HTML) 3 Page - Texas Instruments |
3 / 10 page TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† UNIT Drain-to-source voltage, VDS –7 V Gate-to-source voltage, VGS ±7 V VGS =2 7 V TP = 25°C‡ –5 Continuous drain current ID VGS = – 2.7 V TP = 125°C‡ – 2.3 A Continuous drain current, ID VGS =4 5 V TP = 25°C‡ –6 A VGS = – 4.5 V TP = 125°C‡ – 2.7 Pulse drain current, ID TA = 25°C –24 A Continuous source current (diode conduction), IS TA = 25°C –6 A Continuous total power dissipation TP = 25°C‡ 4 W Junction-to-pin thermal resistance ( θJP) 31 °C/W Continuous total power dissipation TA = 25°C 1.25 W Junction-to-ambient thermal resistance ( θJA) 100 °C/W Storage temperature range, Tstg – 65 to 150 °C Operating junction temperature range, TJ – 40 to 150 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ TP – Temperature of drain pins measured close to the package electrical characteristics at TJ = 25°C (unless otherwise noted) static PARAMETER TEST CONDITIONS TPS1110 TPS1110Y UNIT PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT VGS(th) Gate-to-source threshold voltage VDS = VGS, See Figure 9 ID = – 250 µA, – 0.5 – 0.75 – 0.9 – 0.75 V VSD Source-to-drain voltage (diode forward voltage)§ ISD = – 3 A, See Figure 8 VGS = 0 V, – 0.8 – 0.8 V IGSS Reverse gate current, drain short circuited to source VDS = 0 V, VGS = – 6 V ±100 nA I Z t lt d i t VDS = – 7 V, VGS = 0 V TJ = 25°C – 100 nA IDSS Zero-gate-voltage drain current VDS = – 6 V, TJ = 75°C – 100 nA DS , VGS = 0 V TJ = 125°C –10 µA rDS( ) Static drain-to-source on-state VGS = – 4.5 V, See Figure 5 ID = – 6 A, 65 75 65 m Ω rDS(on) resistance§ VGS = – 2.7 V, See Figure 5 ID = – 2 A, 100 110 100 m Ω gfs Forward transconductance§ VDS = – 5 V, ID = – 6 A 5 5 S Ciss Short-circuit input capacitance, common source 275 275 Coss Short-circuit output capacitance, common source VDS = – 6 V, f = 1 MHz VGS = 0 V, See Figure 6 415 415 pF Crss Short-circuit reverse transfer capacitance, common source 73 73 § Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2% |
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