TPIC2401 datasheet(3/10 Pages) TI1

Il numero della parte	TPIC2401

Spiegazioni elettronici	4-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

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Produttore elettronici	TI1 [Texas Instruments]

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TPIC2401

4CHANNEL COMMONSOURCE POWER DMOS ARRAY

SLIS049 − NOVEMBER 1996

3

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

source-to-drain diode characteristics, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IS = 0.75 A,

VDS = 48 V,

VGS = 0,

di/dt = 100 A/

µs,

80

ns

QRR

Total diode charge

SDS

VGS = 0,

di/dt = 100 A/

µs,

See Figures 1 and 14

180

nC

resistive-load switching characteristics, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Delay time, VGS↑ to VDS↓ turn on

194

td(off)

Delay time, VGS↓ to VDS↑ turn off

VDD = 25 V,

RL = 25 Ω,

ten = 10 ns,

430

ns

tr

Rise time, VDS

VDD = 25 V,

tdis = 10 ns,

RL = 25 Ω,

See Figure 2

ten = 10 ns,

180

ns

tf

Fall time, VDS

tdis = 10 ns,

See Figure 2

90

Qg

Total gate charge

VDD = 48 V,

ID = 1 A,

VGS = 10 V,

4

5

Qgs(th) Threshold gate-to-source charge

VDD = 48 V,

See Figure 3

ID = 1 A,

VGS = 10 V,

0.45

0.56

nC

Qgd

Gate-to-drain charge

See Figure 3

1.55

1.93

nC

LD

Internal drain inductance

5

nH

LS

Internal source inductance

5

nH

Rg

Internal gate resistance

500

Ω

thermal resistance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance

All outputs with equal power

72

RθJC Junction-to-case thermal resistance

All outputs with equal power

5

°C/W

RθJC Junction-to-case thermal resistance

One output dissipating power

8.5

C/W

NOTES:

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