PARAMETER

Collector-Base breakdown voltage

CONDITIONS

Symbol

V

(BR)CBO

Min.

160

UNIT

-

o

A

Off characteristics

c

E

3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.

PARAMETER

DCcurrent gain

CONDITIONS

Symbol

h

FE

60

UNIT

-

On characteristics(3)

c

CE

c

CE

I = 50mA, V

c

CE

Collector-Emitter saturation voltage(3)

Base-Emitter saturation voltage(3)

c

B

c

B

c

B

c

B

0.25

1.0

V

CE(sat)

V

BE(sat)

Page 3

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Max.

Collector cutoff current

V

CB

E

O

V

CB

E

A

V

EB

C

-

100

6.0

I

CBO

50

100

0.15

High Voltage NPN Epitaxial Planar Transistor

Formosa MS

FMBT5550 / FMBT5551

Document ID

Issued Date

Revised Date

Revision

Page.

Types

FM5550

FM5551

180

-

Collector-Emitter

voltage(3)

breakdown

c

B

V

CEO

(BR)

FM5550

FM5551

140

160

-

-

Emitter-Base

voltage

breakdown

V

EBO

(BR)

E

C

V

CB

E

FM5550

FM5551

O

V

CB

E

A

FM5550

FM5551

-

-

-

-

50

Emitter cutoff current

I

EBO

50

-

FM5550

FM5551

Types

Min.

Max.

-

80

-

FM5550

FM5551

FM5550

FM5551

60

80

20

30

250

250

-

-

FM5550

FM5551

-

0.20

-

-

FM5550

FM5551

-

-

-

1.2

1.0

Both Types

Both Types

Both Types

Both Types

DS-231108

2008/02/10

2011/07/21

C

8