TPIC5303 datasheet(9/14 Pages) TI1

Il numero della parte	TPIC5303

Spiegazioni elettronici	3-CHANNEL INDEPENDENT GATE-PROTECTED POWER DMOS ARRAY

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TPIC5303

3CHANNEL INDEPENDENT GATEPROTECTED

POWER DMOS ARRAY

SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995

9

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

TYPICAL CHARACTERISTICS

125

100

50

25

0

225

75

0

4

8

121620

24

175

150

200

CAPACITANCE

vs

DRAIN-TO-SOURCE VOLTAGE

250

28

32

36

40

VDS − Drain-to-Source Voltage − V

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

TJ = 25°C

Ciss @ 0 V = 160 pF

Coss @ 0 V = 216 pF

Crss @ 0 V = 78 pF

1

10

0.1

1

10

0.1

TJ = 125°C

TJ = 150°C

TJ = − 40°C

TJ = 25°C

TJ = 75°C

VSD − Source-to-Drain Voltage − V

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

VGS = 0

Figure 11

Figure 12

30

20

10

0

0.5

1

1.5

2

2.5

3

40

50

60

3.5

4

ID = 0.7 A

TJ = 25°C

See Figure 3

VDD = 20 V

VDD = 30 V

VDD = 48 V

VDD = 20 V

Qg − Gate Charge − nC

DRAIN-TO-SOURCE VOLTAGE AND

GATE-TO-SOURCE VOLTAGE

vs

GATE CHARGE

6

4

2

0

8

10

12

180

120

60

0

200

400

220

280

600

100

300

500

260

240

200

160

140

100

40

20

80

D1, D2, and D3

Z1, Z2, and Z3

Reverse di/dt − A/

µs

VDS = 48 V

VGS = 0

IS = 0.7 A

TJ = 25°C

See Figure 1

REVERSE-RECOVERY TIME

vs

REVERSE di/dt

Figure 13

Figure 14

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