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FDD3672 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDD3672
Spiegazioni elettronici  P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD3672 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDD4243_F085 Rev. C
www.fairchildsemi.com
2
MOSFET Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
-40
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current Continuous (TC< 130oC, VGS = 10V)
-14
A
Pulsed
See Figure 4
EAS
Single Pulse Avalanche Energe
(Note 1)
84
mJ
PD
Power Dissipation
50
W
Dreate above 25oC0.34
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to +175
oC
RθJC
Maximum Thermal Resistance Junction to Case
3
oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD4243
FDD4243_F085
TO252
13”
12mm
2500 units
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
-40
-
-
V
ΔBVDSS
ΔTJ
ID = -250μA, referenced to 25°C
-
-32
-
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -32V
TJ = 125oC
--
-1
μA
--
-100
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1.4
-1.6
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250μA, referenced to 25°C
-
4.7
-
mV/°C
rDS(on)
Drain to Source On Resistance
ID = -6.7A, VGS= -10V
-
36
44
m
Ω
ID = -5.5A, VGS= -4.5V
-
48
64
ID = -6.7A, VGS= -10V,
TJ = 150oC
-
57
70
gFS
Forward Transconductance
ID = –6.7A, VDS = –5V,
-
23
-
S
Ciss
Input Capacitance
VDS = -20V, VGS = 0V,
f = 1MHz
-
1165
1550
pF
Coss
Output Capacitance
-
165
220
pF
Crss
Reverse Transfer Capacitance
-
90
135
pF
RG
Gate Resistance
f = 1MHz
-
4
-
Ω
Qg(TOT)
Total Gate Charge
VDD = -20V, VGS = -10V
ID = -6.7A
-21
29
nC
Qgs
Gate to Source Gate Charge
-
3.4
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
4
-
nC
Breakdown Voltage Temperature
Coefficient


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