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SMBD2836 Scheda tecnica(PDF) 2 Page - Siemens Semiconductor Group |
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SMBD2836 Scheda tecnica(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page SMBD 2835 Semiconductor Group 2 SMBD 2835 SMBD 2836 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF Unit Values Parameter Symbol min. typ. max. DC characteristics V Breakdown voltage I(BR) = 100 µA SMBD 2835 SMBD 2836 V(BR) 35 75 – – – – nA Reverse current VR = 30 V SMBD 2835 VR = 50 V SMBD 2836 IR – – – – 100 100 AC characteristics ns Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr ––6 mV Forward voltage IF = 10 mA IF = 50 mA IF = 100 mA VF – – – – – – 855 1000 1200 pF Diode capacitance VR = 0, f = 1 MHz CD ––4 |
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