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N-HFA16TB120 Scheda tecnica(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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N-HFA16TB120 Scheda tecnica(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 6 page THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 Thermal resistance, junction to case RthJC - - 0.83 K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - Weight - 2.0 - g - 0.07 - oz. Mounting torque 6.0 (5.0) - 12 (10) kgf cm . . (lbf in) Marking device Case style TO-220AC HFA16TB120 ºC SEMICONDUCTOR RoHS RoHS Page 2 of 6 Nell High Power Products N-HFA16TB120 ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS V - = 32 A IF - - µA - - 1200 2.3 20 0.75 - 375 pF 27 ELECTRICAL SPECIFICATIONS (TJ Cathode to anode breakdown voltage VBR = 100 µA IR Maximum forward voltage = 16 A IF = 16 A, T I = 125 ºC F J Maximum reverse leakage current IRM Junction capacitance 2.5 3.0 - - ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS ns - - 90 164 DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ Reverse recovery time IF = 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C F R J 30 - A - 8.3 5.8 - nC - 680 260 - Peak recovery current Reverse recovery charge trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 T = 125 ºC J T = 125 ºC J T = 125 ºC J T = 25 ºC J T = 25 ºC J T = 25 ºC J I = 16A F dI /dt = -200 A/µs F V = 200 V R - VFM CT V = 200V R T = 125°C, V = V rated J R R V = V rated R R I = 0.5A, I = 1.0A, I = 250mA (RG#1 CKT) F R RR 28 - 3.0 UNITS MAX. TYP. MIN. UNITS MAX. TYP. MIN. A/µs - 76 120 - dl /dt2 (rec)M T = 125 ºC J T = 25 ºC J - - nH 8.0 Series inductance LS 40 2000 - - Measured lead to lead 5 mm from package body dl /dt1 (rec)M 245 10 135 15 1838 675 2.8 3.5 35 Peak rate of fall of recovery current during tb www.nellsemi.com |
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