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N-80APU12 Scheda tecnica(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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N-80APU12 Scheda tecnica(HTML) 3 Page - Nell Semiconductor Co., Ltd |
3 / 6 page SEMICONDUCTOR RoHS RoHS Page 3 of 6 Nell High Power Products N-80EPU12 Series -5 10 Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 -4 10 -3 10 -2 10 -1 10 1 Rectangular pulse duration (seconds) 40A 80A 160A 400 300 200 100 0 40 50 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 7000 6000 5000 4000 3000 2000 1000 0 160A 80A 40A 160A 40A 80A Fig.2 Forward current vs. forward voltage 4 3 2 1 0 Anode-to-cathode voltage-V (V) F 500 800 600 400 200 0 1000 1200 Fig3. Reverse recovery time vs. current rate of change Current rate of change-di /dt(A/µs) F Fig.4 Reverse recovery charge vs. current rate of change Current rate of change-di /dt(A/µs) F 800 600 400 200 0 1000 1200 Current rate of change-di /dt(A/µs) F 800 600 400 200 0 1000 1200 Fig.5 Reverse recovery current vs. current rate of change Note : D = 0.9 0.5 0.3 0.7 0.05 0.1 Single pulse Duty Factor D = t /t 1 2 Peak T = P x Z + T J DM θJC C t1 t2 T = 175°C J T = 125°C J T = 25°C J T = -55°C J T = 125°C J V = 800V R T = 125°C J V = 800V R 8000 T = 125°C J V = 800V R |
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