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4T10AI-T Scheda tecnica(PDF) 5 Page - Nell Semiconductor Co., Ltd

Il numero della parte 4T10AI-T
Spiegazioni elettronici  TRIACs, 4A Snubberless, Logic Level and Standard
Download  7 Pages
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Produttore elettronici  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

4T10AI-T Scheda tecnica(HTML) 5 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
4T Series RoHS
RoHS
1
10
100
ITM (A)
0
5
10
15
20
25
30
35
40
ITSM (A)
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
0
1
10
2
9
3
8
7
6
5
1
10
100
1000
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT
IH & IL
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of
of main current versus junction temperature
decrease
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
2
and corresponding value of l t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
2
2
lTSM (A), l t(A s)
l
,l ,l [T ] / l
,l ,l [T =25°C]
GT H L
j
GT H L
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.1
1.0
10.0
100.0
4
VTM(V)
T =25°C
j
T =125°C
j
T max. :
j
Vto = 0.85 V
Rd = 100 mW
Number of cycles
t=20ms
Non repetitive
T initial=25°C
j
Repetitive
T =100°C
c
One cycle
10
100
1000
dI/dt limitation:
50A/µs
T initial=25°C
j
ITSM
2
I t
tp(ms)
T (°C)
j
0.01
1
0.10
1.00
10.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dV/dt)c (V/µs)
D
S
T
A
T (°C)
j
0
1
2
3
4
5
6
0
25
50
75
100
125
Fig.11 DPAK thermal resistance junction to
ambient versus copper surface under
tab (priented circuit board Fr4, copper
thickness:35 µm)
0
10
20
30
40
50
60
70
80
90
100
0
4
8
12
16
20
24
28
32
36
40
Rth(j-a)°(C/W)
(dl/dt)c [T ] / (dl/dt)c [T specified]
j
j
2
S(cm )


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