Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

UF3710L-TQ2-T Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UF3710L-TQ2-T
Spiegazioni elettronici  57A, 100V N-CHANNEL POWER MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF3710L-TQ2-T Scheda tecnica(HTML) 2 Page - Unisonic Technologies

  UF3710L-TQ2-T Datasheet HTML 1Page - Unisonic Technologies UF3710L-TQ2-T Datasheet HTML 2Page - Unisonic Technologies UF3710L-TQ2-T Datasheet HTML 3Page - Unisonic Technologies UF3710L-TQ2-T Datasheet HTML 4Page - Unisonic Technologies UF3710L-TQ2-T Datasheet HTML 5Page - Unisonic Technologies UF3710L-TQ2-T Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
UF3710
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R203-036.E
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
VGSS
±20
V
Drain-Source Voltage
VDSS
100
V
Drain Current
Continuous (VGS=10V)
ID
57
A
Pulsed (Note 2)
IDM
230
Avalanche Current (Note 2)
IAR
57
A
Avalanche Energy
Repetitive(Note 2)
EAR
20
mJ
Single Pulsed(Note 3)
EAS
1060 (Note 4)
Power Dissipation
PD
165
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V
This is a typical value at device destruction and represents operation outside rated limits.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
/W
Junction to Case
θJC
0.75
/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
25
μA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Breakdown Voltage Temperature Coefficient
BV
DSS/△TJ ID=1mμA,Referenced to 25℃
0.13
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=28A (Note)
23
mΩ
Forward Transconductance
gFS
VDS=25V, ID=28 A
32
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f =1MHz
3130
pF
Output Capacitance
COSS
410
pF
Reverse Transfer Capacitance
CRSS
72
pF


Codice articolo simile - UF3710L-TQ2-T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
SHENZHEN DOINGTER SEMIC...
UF3710L-TA3-T DOINGTER-UF3710L-TA3-T Datasheet
942Kb / 3P
   N-Channel MOSFET uses advanced trench technology
More results

Descrizione simile - UF3710L-TQ2-T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Thinki Semiconductor Co...
IRF3710PBF THINKISEMI-IRF3710PBF Datasheet
1Mb / 7P
   57A,100V Heatsink Planar N-Channel Power MOSFET
FQP70N10 THINKISEMI-FQP70N10 Datasheet
1Mb / 7P
   57A,100V Heatsink Planar N-Channel Power MOSFET
logo
Fairchild Semiconductor
FDP150N10 FAIRCHILD-FDP150N10 Datasheet
511Kb / 8P
   N-Channel PowerTrench짰 MOSFET100V, 57A, 15m廓
FDB150N10 FAIRCHILD-FDB150N10 Datasheet
526Kb / 8P
   N-Channel PowerTrench짰 MOSFET 100V, 57A, 15m廓
logo
International Rectifier
IRF3710S IRF-IRF3710S Datasheet
184Kb / 10P
   Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
IRFP3710 IRF-IRFP3710 Datasheet
185Kb / 8P
   Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)
IRF3710 IRF-IRF3710 Datasheet
94Kb / 8P
   Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)
logo
Taiwan Semiconductor Co...
TSM35N10 TSC-TSM35N10 Datasheet
356Kb / 6P
   100V N-Channel Power MOSFET
logo
ON Semiconductor
NTMFS4841N ONSEMI-NTMFS4841N_12 Datasheet
125Kb / 7P
   Power MOSFET 30V 57A Single N-Channel, SO-8FL
May, 2012 ??Rev. 8
logo
DIYI Electronic Technol...
15N10 DYELEC-15N10 Datasheet
1Mb / 8P
   100V N-Channel Power MOSFET
More results


Html Pages

1 2 3 4 5 6


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com