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2N5088L-T92-K Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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2N5088L-T92-K Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-040.Ba ABSOLUTE MAXIMUM RATING (T A=25℃, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter voltage 2N5088 VCEO 30 V 2N5089 25 Collector-Base voltage 2N5088 VCBO 35 V 2N5089 30 Emitter-Base Voltage VEBO 4.5 V Collector Current-Continuous IC 100 mA Power Dissipation PD 625 mW Derate Above 25℃ 5 mW/℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (T A=25℃, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 200 ℃/W Junction to Case θ JC 83.3 ℃/W ELECTRICAL CHARACTERISTICS (T A=25℃, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 2N5088 V(BR)CEO IC=1.0mA, IB=0 (Note) 30 V 2N5089 25 Collector-Base Breakdown Voltage 2N5088 V(BR)CBO IC=100μA, IE=0 35 V 2N5089 30 Collector Cut-Off Current 2N5088 ICBO VCB=20V, IE=0 50 nA 2N5089 VCB=15V, IE=0 50 Emitter Cutoff Current IEBO VEB=3.0V, IC=0 50 nA VEB=4.5V, IC=0 100 DC Current Gain hFE VCE=5.0V, IC=100μA 2N5088 300 900 2N5089 400 1200 VCE=5.0V, IC=1.0mA 2N5088 350 2N5089 450 VCE=5.0V, IC=10mA (Note) 2N5088 300 2N5089 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1.0mA 0.5 V Base-Emitter On Voltage VBE(ON) IC=10mA, VCE=5.0V 0.8 V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT VCE=5.0mA, IC=500μA, f=20MHz 50 MHz Collector-Base Capacitance CCB VCB=5.0V, IE=0, f=100kHz 4 pF Emitter-Base Capacitance CEB VEB=0.5V, IC=0, f=100kHz 10 pF Small-Signal Current Gain 2N5088 hFE VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1400 2N5089 450 1800 Noise Figure 2N5088 NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10KHz ~ 15.7kHz 3.0 dB 2N5089 2.0 Note Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2.0% |
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