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AM7510C Scheda tecnica(PDF) 1 Page - Analog Power |
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AM7510C Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 7 page Analog Power AM7510C N & P-Channel 100-V (D-S) MOSFET VDS (V) ID(A) 4.8 4.4 -2.5 -2.4 Symbol Nch Limit Pch Limit Units VDS 100 -100 VGS ±20 ±20 TA=25°C 4.8 -2.5 TA=70°C 3.7 -2 Pulsed Drain Current b IDM 20 -15 Continuous Source Current (Diode Conduction) a IS 3 -2.7 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 Operating Junction and Storage Temperature Range TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 100 -100 295 @ VGS = -4.5V t <= 10 sec Steady State RθJA Maximum Junction-to-Ambient a 72 @ VGS = 5.5V 275 @ VGS = -10V rDS(on) (mΩ) 62 @ VGS = 10V PRODUCT SUMMARY Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD A W -55 to 150 V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DFN5x6-8L © Preliminary 1 Publication Order Number: DS_AM7510C_1A |
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