AM7338N datasheet(1/3 Pages) ANALOGPOWER

Il numero della parte	AM7338N

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

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Produttore elettronici	ANALOGPOWER [Analog Power]

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AM7338N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM7338_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

N-Channel 30-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

DFN3x3-8PP saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m( )

ID (A)

6.9 @ VGS = 10V

19

9.8 @ VGS = 4.5V

16

PRODUCT SUMMARY

30

Symbol

Limit

Units

VDS

30

VGS

±20

TA=25

o

C

±19

TA=70

o

C

±16

IDM

±40

IS

2

A

TA=25

o

C

3.5

TA=70

o

C

2

TJ, Tstg

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parame te r

Pulsed Drain Current

b

V

Gate-Source Voltage

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

25

o

C/W

Maximum Junction-to-Ambient

a

t <= 5 sec

RθJA

50

o

C/W

THERMAL RESISTANCE RATINGS

Parameter

S

G

1

2

3

4

DFN3x3-8PP

Top View

D

8

7

6

5

D

S

G

N-Channel MOSFET

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