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AM3457P Scheda tecnica(PDF) 1 Page - Analog Power |
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AM3457P Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM3457P P-Channel 30-V (D-S) MOSFET VDS (V) ID(A) -5 -4.2 Symbol Limit Units VDS -30 VGS ±20 TA=25°C -5 TA=70°C -4 IDM -20 IS 2.4 A TA=25°C 2 TA=70°C 1.3 TJ, Tstg -55 to 150 °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a t <= 10 sec Steady State THERMAL RESISTANCE RATINGS °C/W Parameter RθJA A ID Operating Junction and Storage Temperature Range PD W Power Dissipation a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Continuous Drain Current a Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage PRODUCT SUMMARY -30 rDS(on) (mΩ) 54 @ VGS = -10V 75 @ VGS = -4.5V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players TSOP-6 © Preliminary 1 Publication Order Number: DS_AM3457P_1A |
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