AM90N06-10PCFM datasheet(1/2 Pages) ANALOGPOWER

Il numero della parte	AM90N06-10PCFM

Spiegazioni elettronici	N-Channel 60-V (D-S) MOSFET

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Produttore elettronici	ANALOGPOWER [Analog Power]

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AM90N06-10PCFM

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM90N06-10PCFM_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m( )

ID (A)

9.9 @ VGS = 10V

13 @ VGS = 4.5V

PRODUCT SUMMARY

60

90

a

N-Channel 60-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

TO-220 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

60

VGS

±20

Continuous Drain Current

a

TC=25

o

C ID

90

IDM

240

IS

90

A

Power Dissipation

a

TC=25

o

C PD

300

W

TJ, Tstg -55 to 175

o

C

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUMRATINGS (TA = 25

oCUNLESSOTHERWISENOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum Units

MaximumJunction-to-Ambient

a

RθJA

62.5

o

C/W

MaximumJunction-to-Case

RθJC

0.5

o

C/W

THERMALRESISTANCERATINGS

D

1

S

1

G

1

N-Channel MOSFET

TO-220CFM

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