2SC3355-T datasheet(4/10 Pages) RENESAS

Il numero della parte	2SC3355-T

Spiegazioni elettronici	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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Data Sheet PU10207EJ01V0DS

2

2SC2570A

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

–

1.0

µA

Emitter Cut-off Current

IEBO

VEB = 1.0 V, IC = 0 mA

–

1.0

µA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 20 mA

40

–

200

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 10 V, IC = 20 mA

–

5.0

–

GHz

Insertion Power Gain

S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz

8

10

–

dB

Noise Figure

NF

VCE = 10 V, IC = 5 mA, f = 1 GHz

–

1.5

3.0

dB

Output Capacitance

Cob

Note 2

VCB = 10 V, IE = 0 mA, f = 1 MHz

–

0.7

0.9

pF

Maximum Available Power Gain

MAG

VCE = 10 V, IC = 20 mA, f = 1 GHz

–

11.5

−

dB

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

E

Marking

E

hFE Value

40 to 200

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