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N0100P-T1-AT Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte N0100P-T1-AT
Spiegazioni elettronici  P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0100P-T1-AT Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D20203EJ1V0DS
2
N0100P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
12 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = m8 V, VDS = 0 V
m10
μA
Gate to Source Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1.0 mA
0.45
1.5
V
Forward Transfer AdmittanceNote
| yfs |
VDS =
10 V, ID = 2.0 A
4
S
Drain to Source On-state ResistanceNote
RDS(on)1
VGS =
4.5 V, ID = 2.0 A
37
44
m
Ω
RDS(on)2
VGS =
3.0 V, ID = 2.0 A
42
56
m
Ω
RDS(on)3
VGS =
2.5 V, ID = 2.0 A
46
62
m
Ω
RDS(on)4
VGS =
1.8 V, ID = 1.5 A
60
105
m
Ω
Input Capacitance
Ciss
VDS =
10 V,
720
pF
Output Capacitance
Coss
VGS = 0 V,
150
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
80
pF
Turn-on Delay Time
td(on)
VDD =
6 V, ID = 1.75 A,
18
ns
Rise Time
tr
VGS =
4.5 V,
37
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
240
ns
Fall Time
tf
114
ns
Total Gate Charge
QG
VDD =
10 V,
8.3
nC
Gate to Source Charge
QGS
VGS =
4.5 V,
1.3
nC
Gate to Drain Charge
QGD
ID =
3.5 A
2.1
nC
Body Diode Forward VoltageNote
VF(S-D)
IF = 3.5 A, VGS = 0 V
0.84
V
Reverse Recovery Time
Trr
IF = 3.5 A, VGS = 0 V,
270
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
300
nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS (−)
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG =
−2 mA
VGS
Wave Form
VDS
Wave Form
VGS (−)
VDS (−)
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%
VGS
Wave Form
VDS
Wave Form
VGS (−)
VDS (−)
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%


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