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SI7703EDN Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7703EDN Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 71429 S-83043-Rev. C, 22-Dec-08 Vishay Siliconix Si7703EDN Notes a. Surface Mounted on 1" x 1" FR4 board. Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum Unit Junction-to-Ambienta t ≤ 10 s MOSFET RthJA 35 44 °C/W Schottky 51 64 Steady State MOSFET 75 94 Schottky 91 115 Junction-to-Case (Drain) Steady State MOSFET RthJC 45 Schottky 10 12 MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 800 µA - 0.45 - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1.5 µA VDS = 0 V, VGS = ± 12 V ± 100 mA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 5 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 6.3 A 0.041 0.048 Ω VGS = - 2.5 V, ID = - 5.3 A 0.057 0.068 VGS = - 1.8 V, ID = - 1 A 0.072 0.090 Forward Transconductancea gfs VDS = - 10 V, ID = - 6.3 A 14 S Diode Forward Voltagea VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A 12 18 nC Gate-Source Charge Qgs 2.5 Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω 2.5 4 νs Rise Time tr 46 Turn-Off DelayTime td(off) 15 23 Fall Time tf 12 18 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 0.5 A 0.42 0.48 V IF = 0.5 A, TJ = 125 °C 0.33 0.4 Maximum Reverse Leakage Current Irm Vr = 20 V 0.002 0.100 mA Vr = 20 V, TJ = 85 °C 0.10 1 Vr = 20 V, TJ = 125 °C 1.5 10 Junction Capacitance CT Vr = 10 V 31 pF |
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