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STF8A80 Scheda tecnica(PDF) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Il numero della parte STF8A80
Spiegazioni elettronici  Bi-Directional Triode Thyristor
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Produttore elettronici  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Homepage  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

STF8A80 Scheda tecnica(HTML) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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V
STF8A80
STF8A80
STF8A80
STF8A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
VGM (10V)
10
PGM (5W)
On-State
o
Gate Voltage
[V]
10
25 ℃
PG(AV) (0.5W)
IGM (2A)
TJ = 125 C
Curren
1 t [A]
10
TJ = 25 C
10
VGD (0.2V)
10
1
2
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
10
10
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
10
9
Powe
8r
θ
Dissip
7 ation [W]
6
π
θ
2π
360°
θ = 180
o
o
θ = 150
o
θ = 120
θ = 90
o
θ = 60
o
130
Allowable Case
Temperature
[ oC]120
110
θ : Conduction Angle
θ = 30
o
5
θ = 30
o
π
θ
π
4
100
θ = 60
o
3
2
90
θ
360°
o
θ = 90
o
θ = 120
o
θ = 150 o
θ = 180
1
0
80
θ : Conduction Angle
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
100
10
80
Surge On-State
Current [A]
60Hz
V GT1
60
VGT (Vt CGT)(25 C)
_
V
GT1
o
_
o
GT3
1
40
50Hz
20
0
0
10
10
1
10
2
0.1
-50
0
50
100
150
Time (cycles)
Junction Temperature [ C
o
]
3/5


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