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BUZ76 Scheda tecnica(PDF) 4 Page - Siemens Semiconductor Group

Il numero della parte BUZ76
Spiegazioni elettronici  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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Produttore elettronici  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ76 Scheda tecnica(HTML) 4 Page - Siemens Semiconductor Group

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Semiconductor Group
4
07/96
BUZ 76
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS
-
-
3
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
-
-
12
Inverse diode forward voltage
VGS = 0 V, IF = 6 A
VSD
-
1
1.4
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr
-
300
-
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr
-
2.5
-
µC


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