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BUZ71AL Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ71AL Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 71 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 71 AL 50 V 13 A 0.12 Ω TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C ID 13 A Pulsed drain current TC = 25 °C IDpuls 52 Avalanche current,limited by Tjmax IAR 14 Avalanche energy,periodic limited by Tjmax EAR 1 mJ Avalanche energy, single pulse ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C EAS 6 Gate source voltage VGS ± 14 V Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation TC = 25 °C Ptot 40 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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