Motore di ricerca datesheet componenti elettronici |
|
BUZ384 Scheda tecnica(PDF) 2 Page - Siemens Semiconductor Group |
|
BUZ384 Scheda tecnica(HTML) 2 Page - Siemens Semiconductor Group |
2 / 9 page Semiconductor Group 2 07/96 BUZ 384 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 500 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3.5 4 Zero gate voltage drain current VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C IDSS - - 100 20 1000 250 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 6.5 A RDS(on) - 0.55 0.6 Ω |
Codice articolo simile - BUZ384 |
|
Descrizione simile - BUZ384 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |