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BUZ382 Scheda tecnica(PDF) 6 Page - Siemens Semiconductor Group |
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BUZ382 Scheda tecnica(HTML) 6 Page - Siemens Semiconductor Group |
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6 / 9 page  Semiconductor Group 6 07/96 BUZ 382 Typ. output characteristics ID = ƒ(VDS) parameter: t p = 80 µs 0 4 8 12 16 20 V 26 V DS 0 2 4 6 8 10 12 14 16 18 20 22 24 A 28 I D V GS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 125W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V GS 0 4 8 12 16 20 A 28 I D 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ω 1.3 R DS (on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 2 4 6 8 10 12 14 A 18 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 2 4 6 8 10 12 A 15 I D 0.0 1.0 2.0 3.0 4.0 5.0 6.0 S 8.0 g fs |
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